unisonic technologies co., ltd 15n40 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-633.b 15a, 400v n-channel power mosfet ? description the utc 15n40 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 15n40 is generally applied in high efficiency switch mode power supplies. ? features * r ds(on) =0.35 ? @ v gs =10v,i d =7.5a * low gate charge (typical 28nc) * low c rss (typical 17pf) * high switching speed ? symbol 1.gate 3.source 2.drain to-220 to-220f1 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 15n40l-ta3-t 15N40G-TA3-T to-220 g d s tube 15n40l-tf1-t 15n40g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
15n40 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-633.b ? absolute maximum ratings (t c =25c, unless otherwise specified.) (note 5) parameter symbol ratings unit drain to source voltage v dss 400 v gate-source voltage v gss 30 v t c =25c 15 a continuous t c =100c i d 9 a drain current pulsed (note 2) i dm 60 a avalanche current (note 2) i ar 15 a single pulsed (note 3) e as 731 mj avalanche energy repetitive (note 2) e ar 17 mj peak diode recovery dv/dt (note 4) dv/dt 15 v/ns power dissipation ( t c =25c ) 170 w derate above 25c p d 1.45 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limit ed by maximum junction temperature. 3. l=6.5mh, i as =15a. v dd =50v, r g =25 ? , starting t j =25c 4. i sd 15a, di/dt 200a/s, v dd bv dss , starting t j =2 5c 5. drain current limited by maximum junction temperature ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.7 c/w
15n40 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-633.b ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t j =25c 400 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =250a 0.5 v/c v ds =400v, v gs =0v, 1 a drain-source leakage current i dss v ds =320v, t c =125c 10 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v , v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v gs =v ds , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =7.5a 0.26 0.35 ? dynamic parameters input capacitance c iss 1310 1750 pf output capacitance c oss 210 280 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 17 25 pf switching parameters total gate charge q g 28 36 nc gate to source charge q gs 8 nc gate to drain ("miller") charge q gd v ds =320v, v gs =10v, i d =15a (note 1, 2) 12 nc turn-on delay time t d(on) 26 62 ns rise time t r 55 120 ns turn-off delay time t d(off) 72 154 ns fall-time t f v dd =200v, i d =15a, r g =25 ? (note 1, 2) 40 90 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 15 a maximum body-diode pulsed current i sm 60 a drain-source diode forward voltage v sd i sd =15a, v gs =0v 1.4 v body diode reverse recovery time t rr 333 ns body diode reverse recovery charge q rr i sd =15a, v gs =0v, di f /dt=100a/s (note 1) 3.24 c notes: 1. pulse test: pulse width 300s; duty cycle 2%. 2. essentially independent of operating temperatur e typical characteristics
15n40 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-633.b ? test circuits and waveforms
15n40 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-633.b ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/dt test circuit & waveforms same type as dut i sd v gs l driver
15n40 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-633.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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